IS42S32800D-6TL ISSI, Integrated Silicon Solution Inc, IS42S32800D-6TL Datasheet - Page 58

• Manufacturer Part Number: IS42S32800D-6TL
• Description: IC SDRAM 256MBIT 166MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800D-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 166 MHz
• Access Time: 6.5 ns, 5.4 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 180 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800D
58
Figure 24.2.Precharge Termination of a Burst
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CLK
CS#
A10
DQ
High
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
(Burst Length=8 or Full Page,CAS#Latency=2)
t
CK2
Command
Bank A
DAx0 DAx1 DAx2 DAx3
Write
CAx
Precharge Termination
Write data is masked.
of a Write Burst.
t
Precharge
Command
WR
Bank A
t
RP
Command
Activate
Bank A
RAy
RAy
Command
Bank A
CAy
Read
Integrated Silicon Solution, Inc. — www.issi.com
Ay0
Precharge
Command
Bank A
Ay1
t
RP
Ay2
Command
Activate
Bank A
RAz
RAz
Command
Bank A
Read
CAz
Precharge Termination
of a Read Burst.
Az0
Precharge
Command
Bank A
Az1
t
RP
Az2
Rev. 00B
11/21/07