IS42S32800D-6TL ISSI, Integrated Silicon Solution Inc, IS42S32800D-6TL Datasheet - Page 25

• Manufacturer Part Number: IS42S32800D-6TL
• Description: IC SDRAM 256MBIT 166MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800D-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Data Bus Width: 32 bit
• Maximum Clock Frequency: 166 MHz
• Access Time: 6.5 ns, 5.4 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 180 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32800D
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00B
11/21/07
Figure 2.AC Parameters for Read Timing (Burst Length=2,CAS#Latency=2)
BS0,1
A0-A9
CAS#
RAS#
DQM
CKE
CS#
WE#
CLK
A10
DQ
Hi-Z
t
CH
t
T0
IS
t
CL
t
IS
T1
Command
Activate
Bank A
RAx
RAx
t
IS
t
T2
CK2
t
t
RCD
t
IH
IH
T3
Command
Bank A
t
Read
RRD
CAx
T4
t
t
LZ
AC2
T5
Command
Activate
Bank B
RBx
RBx
Ax0
t
AC2
t
T6
OH
t
RAS
Ax1
Auto Precharge
t
HZ
T7
Command
t
Read with
RC
Bank B
CBx
Begin AutoPrecharge
T8
Bank B
T9
Precharge
Command
Bank A
Bx0
T10
t
RP
Bx1
t
T11
t
IH
HZ
Command
Activate
Bank A
RAy
RAy
T12
T13
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