IS61NVP51236-200TQLI ISSI, Integrated Silicon Solution Inc, IS61NVP51236-200TQLI Datasheet - Page 10

• Manufacturer Part Number: IS61NVP51236-200TQLI
• Description: IC SRAM 18MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NVP51236-200TQLI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Density: 18Mb
• Access Time (max): 3.1ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 2.5V
• Address Bus: 19b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 475mA
• Operating Supply Voltage (min): 2.375V
• Operating Supply Voltage (max): 2.625V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

WRITE TRUTH TABLE
Notes:
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
INTERLEAVED BURST ADDRESS TABLE
External Address
10
IS61NLP25672/IS61NVP25672
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418
Operation
READ
WRITE BYTE a
WRITE BYTE b
WRITE BYTE c
WRITE BYTE d
WRITE BYTE e
WRITE BYTE f
WRITE BYTE g
WRITE BYTE h
WRITE ALL BYTEs
WRITE ABORT/NOP
A1 A0
00
01
10
11
1st Burst Address
(x72)
A1 A0
WE
H
L
L
L
L
L
L
L
L
L
L
01
00
11
10
BWa
X
H
H
H
H
H
H
H
H
L
L
2nd Burst Address
BWb
(MODE = V
H
H
H
H
H
H
H
H
X
L
L
A1 A0
10
11
00
01
BWc
X
H
H
H
H
H
H
H
H
L
L
dd
Integrated Silicon Solution, Inc. — www.issi.com
or NC)
BWd
H
H
H
H
H
H
H
H
X
L
L
3rd Burst Address
A1 A0
BWe
11
10
01
00
X
H
H
H
H
H
H
H
H
L
L
BWf
H
H
H
H
H
H
H
H
X
L
L
BWg
X
H
H
H
H
H
H
H
H
L
L
01/06/2011
BWh
Rev. M
H
H
H
H
H
H
H
H
X
L
L