IS61NVP51236-200TQLI ISSI, Integrated Silicon Solution Inc, IS61NVP51236-200TQLI Datasheet - Page 12

• Manufacturer Part Number: IS61NVP51236-200TQLI
• Description: IC SRAM 18MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NVP51236-200TQLI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Density: 18Mb
• Access Time (max): 3.1ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 2.5V
• Address Bus: 19b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 475mA
• Operating Supply Voltage (min): 2.375V
• Operating Supply Voltage (max): 2.625V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC ELECTRICAL CHARACTERISTICS
Symbol
V
V
V
V
I
POWER SUPPLY CHARACTERISTICS
Symbol Parameter
I
I
I
Note:
1. MODE pin has an internal pullup and should be tied to V
12
IS61NLP25672/IS61NVP25672
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418
I
cc
Sb
SbI
Sb
I
lI
lo
V
oh
ol
Ih
Il
2
SS
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
cMoS Input
Sleep Mode
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
dd
– 0.2V.
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
f = 0
ZZ>V
All Inputs ≤ 0.2V or ≥ V
dd
dd
In
≤ V
= Max.,
= Max.,
Ih
Il
Ih
SS
, f = Max.
Test Conditions
I
I
I
I
V
V
, ZZ ≤ V
oh
oh
ol
ol
SS
SS
+ 0.2V or ≥V
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
≤ V
≤ V
Il
kc
or ≥ V
In
ouT
Il
min.
,
≤ V
(Over Operating Range)
≤ V
Ih
dd
,
dd
ddq
(1)
dd
(1)
– 0.2V
– 0.2V,
, OE = V
(Over Operating Range)
Temp. range x18
dd
Com.
Com.
Com.
Com.
Ind.
Ind.
Ind.
Ind.
or V
Ih
SS
. It exhibits ±100µA maximum leakage current when tied to ≤
450
500
150
150
110
125
60
75
Min.
–0.3
Integrated Silicon Solution, Inc. — www.issi.com
2.4
2.0
—
–5
–5
-250
MAx
450
500
150
150
110
125
3.3V
x36
60
75
V
dd
Max.
0.4
0.8
—
5
5
+ 0.3
600
650
150
150
110
125
x72
60
75
425
475
150
150
110
125
x18
60
75
Min.
–0.3
2.0
1.7
–5
–5
—
2.5V
-200
MAx
425
475
150
150
110
125
x36
60
75
V
dd
Max.
0.4
0.7
—
5
5
+ 0.3
550
600
150
150
110
125
x72
60
75
01/06/2011
Unit
µA
µA
Rev. M
Unit
mA
mA
mA
mA
V
V
V
V