IS61NVP51236-200TQLI ISSI, Integrated Silicon Solution Inc, IS61NVP51236-200TQLI Datasheet - Page 18

• Manufacturer Part Number: IS61NVP51236-200TQLI
• Description: IC SRAM 18MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NVP51236-200TQLI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Density: 18Mb
• Access Time (max): 3.1ns
• Sync/async: Synchronous
• Architecture: SDR
• Clock Freq (max): 200MHz
• Operating Supply Voltage (typ): 2.5V
• Address Bus: 19b
• Package Type: TQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 4
• Supply Current: 475mA
• Operating Supply Voltage (min): 2.375V
• Operating Supply Voltage (max): 2.625V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 100
• Word Size: 36b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

WRITE CYCLE TIMINg
18
IS61NLP25672/IS61NVP25672
IS61NLP51236/IS61NVP51236
IS61NLP102418/IS61NVP102418
CLK
ADV
Address
WRITE
CKE
CE
OE
Data In
Data Out
t
SE
Q0-3
A1
NOTES: WRITE = L means WE = L and BWx = L
t
HE
WE = L and BWX = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
Q0-4
t
OEHZ
D1-1
A2
t
KH
t
KC
t
KL
D2-1
D2-2
Integrated Silicon Solution, Inc. — www.issi.com
D2-3
A3
D2-4
D3-1
t
DS
D3-2
t
DH
D3-3
Don't Care
Undefined
D3-4
01/06/2011
Rev. M