M25P80-VMN6TP NUMONYX, M25P80-VMN6TP Datasheet - Page 28
![IC FLASH 8MBIT 75MHZ 8SOIC](/photos/7/28/72830/m25p80-vmn6tp_sml.jpg)
M25P80-VMN6TP
Manufacturer Part Number
M25P80-VMN6TP
Description
IC FLASH 8MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25P80-VMP6G.pdf
(57 pages)
Specifications of M25P80-VMN6TP
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Package
8SOIC N
Cell Type
NOR
Density
8 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 16
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P80-VMN6TP
M25P80-VMN6TPTR
Q3580447
M25P80-VMN6TPTR
Q3580447
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P80-VMN6TP
Manufacturer:
Numonyx
Quantity:
22 500
Company:
Part Number:
M25P80-VMN6TP
Manufacturer:
MICRON44
Quantity:
2 163
Part Number:
M25P80-VMN6TP
Manufacturer:
ST
Quantity:
20 000
6.7
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Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on Serial Data Output (Q), each
bit being shifted out, at a maximum frequency f
The instruction sequence is shown in
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
Figure 13. Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
1. Address bits A23 to A20 are Don’t Care.
S
C
D
Q
S
C
D
Q
and data-out sequence
7
32 33 34
0
6
1
High Impedance
Dummy Byte
5
2
Instruction
4
35
3
3
36 37 38 39 40 41 42 43 44 45 46
4
2
5
1
6
0
7
MSB
23
7
8
Figure
22 21
6
9 10
24 BIT ADDRESS
DATA OUT 1
5
13.
4
C
3
3
28 29 30 31
, during the falling edge of Serial Clock (C).
2
2
1
1
0
0
47
MSB
7
6
DATA OUT 2
5
4
3
2
1
0
MSB
AI04006
7