M25P80-VMN6TP NUMONYX, M25P80-VMN6TP Datasheet - Page 41
![IC FLASH 8MBIT 75MHZ 8SOIC](/photos/7/28/72830/m25p80-vmn6tp_sml.jpg)
M25P80-VMN6TP
Manufacturer Part Number
M25P80-VMN6TP
Description
IC FLASH 8MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M25P80-VMP6G.pdf
(57 pages)
Specifications of M25P80-VMN6TP
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Package
8SOIC N
Cell Type
NOR
Density
8 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 16
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25P80-VMN6TP
M25P80-VMN6TPTR
Q3580447
M25P80-VMN6TPTR
Q3580447
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P80-VMN6TP
Manufacturer:
Numonyx
Quantity:
22 500
Company:
Part Number:
M25P80-VMN6TP
Manufacturer:
MICRON44
Quantity:
2 163
Part Number:
M25P80-VMN6TP
Manufacturer:
ST
Quantity:
20 000
Table 15.
Symbol
t
t
t
t
t
t
t
t
t
SHQZ
HHQX
WHSL
SHWL
CLCH
CHCL
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
SHSL
CLQV
CLQX
HLCH
CHHL
DP
CL
f
f
C
R
(2)
(2)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(5)
(5)
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
t
CLL
t
DIS
f
DH
t
HO
HZ
LZ
AC characteristics (75 MHz operation)
C
V
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,
RDID, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Rise time
Clock Fall time
S active setup time (relative to C)
S not active hold time (relative to C)
Data In setup time
Data In hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid under 30 pF
Clock Low to Output Valid under 10 pF
Output hold time
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect setup time
Write Protect hold time
S High to Deep Power-down mode
S High to Standby mode without Electronic Signature
Read
S High to Standby mode with Electronic Signature
Read
75 MHz available only for products made in 110 nm technology,
Test conditions specified in
(3)
(4)
(peak to peak)
(peak to peak)
Parameter
Table 10
and
—
—
—
—
—
—
Min.
Table 12
100
100
DC
DC
0.1
0.1
20
6
6
5
5
2
5
5
5
0
5
5
5
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
(1)
Max.
1.8
75
33
8
8
6
8
8
3
3
MHz
MHz
V/ns
V/ns
Unit
41/57
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs