M25PE16-VMW6TG NUMONYX, M25PE16-VMW6TG Datasheet - Page 50

• Manufacturer Part Number: M25PE16-VMW6TG
• Description: IC FLASH 16MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE16-VMW6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Package: 8SOIC W
• Cell Type: NOR
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 32
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PE16-VMW6TGTR

DC and AC parameters
Table 19.
1. Delivery of parts operating with a maximum clock rate of 75 MHz starts from week 8 of 2008.
2. t
3. Value guaranteed by characterization, not 100% tested in production.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
5. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
6.
50/58
Symbol
t
t
t
WHSL
SHWL
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
DVCH
CHDX
CHSH
SHCH
PW
CH
SLCH
CHSL
SHSL
CLQV
CLQX
DP
t
CL
PP
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
t
t
t
SSE
CH
int(A) corresponds to the upper integer part of A. For instance, int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
t
f
f
PE
SE
BE
W
C
R
(2)
(3)
(5)
(2)
(5)
(3)
+ t
(3)
(4)
(4)
CL
must be greater than or equal to 1/ f
t
t
t
AC characteristics (75 MHz operation)
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
CLL
DIS
f
DH
HO
t
C
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE,
SE, SSE, DP, RDP, WREN, WRDI, RDSR,
WRSR
Clock frequency for read instructions
Clock high time
Clock low time
Clock slew rate
S active setup time (relative to C)
S not active hold time (relative to C)
Data in setup time
Data in hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock low to output valid under 30 pF/10 pF
Output hold time
Write protect setup time
Write protect hold time
S to deep power-down
S High to standby mode
Write status register cycle time
Page write cycle time (256 bytes)
Page program cycle time (256 bytes)
Page program cycle time (n bytes)
Page erase cycle time
Sector erase cycle time
Subsector erase cycle time
Bulk erase cycle time
Test conditions specified in
(2)
Parameter
(peak to peak)
C
.
(1)
Table 14
and
Min.
D.C.
D.C.
100
100
0.1
20
6
6
2
5
0
5
5
5
5
Table 15
int(n/8) × 0.025
Typ.
0.8
11
10
50
25
3
1
(6)
Max.
150
8/6
75
33
30
15
23
20
60
8
3
3
5
M25PE16
MHz
MHz
Unit
V/ns
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s
s