CY7C1041DV33-10ZSXIT Cypress Semiconductor Corp, CY7C1041DV33-10ZSXIT Datasheet - Page 4

• Manufacturer Part Number: CY7C1041DV33-10ZSXIT
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C1041DV33-10ZSXIT

• Memory Size: 4M (256K x 16)
• Package / Case: 44-TSOP II
• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Access Time: 10 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 3 V
• Maximum Operating Current: 90 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3.3 V
• Memory Configuration: 256K X 16
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 44
• Operating Temperature Range: -40°C To +85°C
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: SDR
• Clock Freq (max): Not Required
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 18b
• Operating Temp Range: -40C to 85C
• Supply Current: 90mA
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 256Kword
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage on V
DC voltage applied to outputs
in high Z State
DC input voltage
Current into outputs (LOW) ......................................... 20 mA
DC Electrical Characteristics
Over the Operating Range
Document Number: 38-05473 Rev. *I
V
V
V
V
I
I
I
I
I
Notes
Parameter
IX
OZ
CC
SB1
SB2
5. Minimum voltage is –2.0 V and V
6. Automotive product information is preliminary.
OH
OL
IH
IL
[5]
[5]
Output HIGH voltage V
Output LOW voltage
Input HIGH voltage
Input LOW voltage
Input leakage current GND < V
Output leakage
current
V
supply current
Automatic CE
power-down current
—TTL inputs
Automatic CE
power-down current
—CMOS inputs
CC
[5]
[5]
................................... –0.3 V to V
operating
Description
................................ –0.3 V to V
CC
relative to GND
IH
(max) = V
V
GND < V
disabled
V
f = f
Max V
V
V
Max V
CE > V
V
or V
CC
CC
CC
IN
IN
IN
CC
[5]
MAX
> V
< V
> V
IN
= Min, I
= Min, I
= Max,
+ 2 V for pulse durations of less than 20 ns.
....–0.3 V to +4.6 V
Test Conditions
CC
CC
< 0.3 V, f = 0
CC
IH
IL
CC
= 1/t
, f = f
, CE > V
,
I
OUT
or
< V
– 0.3 V,
– 0.3 V,
OH
OL
RC
< V
CC
MAX
CC
CC
= 8.0 mA
= –4.0 mA
CC
IH
+0.3 V
+0.3 V
, output
100 MHz
83 MHz
66 MHz
40 MHz
–0.3
Min
2.4
2.0
–1
–1
Static discharge voltage............ ...............................> 2001 V
(MIL-STD-883, method 3015)
Latch-up current ..................................................... > 200 mA
Operating Range
–
–
–
–
–
–
–
Industrial
Automotive-A
Automotive-E
(Industrial)
–10
V
Range
CC
Max
0.4
0.8
+1
+1
90
80
70
60
20
10
–
+ 0.3
[1]
[1]
(Automotive-A)
–0.3
Min
2.4
2.0
–1
–1
–
–
–
–
–
–
–
–40 °C to +125 °C 3.3 V ± 0.3 V
–40 °C to +85 °C 3.3 V ± 0.3 V
–40 °C to +85 °C 3.3 V ± 0.3 V
Temperature
–10
Ambient
V
CC
Max
0.4
0.8
+1
+1
90
80
70
60
20
10
–
+ 0.3
[6]
CY7C1041DV33
(Automotive-E)
–0.3
Min
2.4
2.0
–1
–1
–
–
–
–
–
–
–
V
–12
CC
V
CC
Max
0.4
0.8
+1
+1
95
85
75
15
15
–
–
Page 4 of 17
+ 0.3
[6]
Speed
10 ns
10 ns
12 ns
Unit
mA
mA
mA
mA
mA
mA
μA
μA
V
V
V
V
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