UPD44164362AF5-E33-EQ2 Renesas Electronics America, UPD44164362AF5-E33-EQ2 Datasheet - Page 19
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UPD44164362AF5-E33-EQ2
Manufacturer Part Number
UPD44164362AF5-E33-EQ2
Description
SRAM DDRII 18MBIT CIO 165-PBGA
Manufacturer
Renesas Electronics America
Datasheet
1.UPD44164182AF5-E33-EQ2.pdf
(40 pages)
Specifications of UPD44164362AF5-E33-EQ2
Format - Memory
RAM
Memory Type
SRAM - Synchronous, DDR II
Memory Size
18M (512K x 36)
Speed
300MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
AC Characteristics (V
AC Test Conditions (V
Output load condition
Input waveform (Rise / Fall time ≤ 0.3 ns)
Output waveform
1.25 V
0.25 V
DD
V
DD
DD
0.75 V
= 1.8 ± 0.1 V)
μ
Q / 2
= 1.8 ± 0.1 V, V
PD44164082A-A, 44164092A-A, 44164182A-A, 44164362A-A
SRAM
V
DD
ZQ
REF
Figure 1. External load at test
Q = 1.4 V to V
Data Sheet M19866EJ1V0DS
0.75 V
250 Ω
Test Points
Test Points
DD
Z
O
)
= 50 Ω
V
DD
Q / 2
50 Ω
V
DD
Q / 2
0.75 V
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