MT46H8M16LFCF-10 Micron Technology Inc, MT46H8M16LFCF-10 Datasheet - Page 11

IC DDR SDRAM 128MBIT 60VFBGA

MT46H8M16LFCF-10

Manufacturer Part Number
MT46H8M16LFCF-10
Description
IC DDR SDRAM 128MBIT 60VFBGA
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheets

Specifications of MT46H8M16LFCF-10

Format - Memory
RAM
Memory Type
Mobile DDR SDRAM
Memory Size
128M (8Mx16)
Speed
100MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
60-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
15b
Access Time (max)
7ns
Maximum Clock Rate
104MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
90mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
MT46H8M16LFCF-10
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 IT
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 IT TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT46H8M16LFCF-10 TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
PDF: 09005aef822b7e27/Source: 09005aef822b7dd6
MT46H8M16LFB_2.fm - Rev. A 5/06 EN
Table 5:
Table 6:
Notes:
2. For BL = 4, A2–Ai select the four-data-element block; A0–A1 select the first access within the
3. For BL = 8, A3–Ai select the eight-data-element block; A0–A2 select the first access within
4. Whenever a boundary of the block is reached within a given sequence above, the following
5. Ai = the most significant column address bit for a given configuration.
Burst Definition
1. For BL = 2, A1–Ai select the two-data-element block; A0 selects the first access within the
CAS Latency
Length
Burst
block.
block.
the block.
access wraps within the block.
2
4
8
Speed
A2
0
0
0
0
1
1
1
1
-75
-10
Column Address
Starting
A1
A1
0
0
1
1
0
0
1
1
0
0
1
1
11
A0
A0
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Allowable Operating Clock Frequency (MHz)
128Mb: 8 Meg x 16 Mobile DDR SDRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CL = 2
f
f
Type = Sequential
≤83
≤67
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
Order of Accesses Within a Burst
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1
1-0
©2006 Micron Technology, Inc. All rights reserved.
Register Definition
Type = Interleaved
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
f
f
CL = 3
≤133
≤104
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1
1-0
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