MT46V8M16TG-75:D Micron Technology Inc, MT46V8M16TG-75:D Datasheet - Page 23
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MT46V8M16TG-75:D
Manufacturer Part Number
MT46V8M16TG-75:D
Description
IC DDR SDRAM 128MBIT 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M8TG-6T_LD_TR.pdf
(81 pages)
Specifications of MT46V8M16TG-75:D
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (8Mx16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
140mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46V8M16TG-75:D
Manufacturer:
MICRON
Quantity:
20 000
Table 19:
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
AC Characteristics
Parameter
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
Terminating voltage delay to V
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-
READ command
Exit SELF REFRESH-to-READ command
Data valid output window (DVW)
Electrical Characteristics and Recommended AC Operating Conditions (-6, -6T, -75E)
(continued)
Notes: 1–6, 15–18, 34 apply to entire table; Notes appear on pages 26–32;
Notes:
1. -6 (FBGA) available in 256Mb and 512Mb densities only.
128Mb, 256Mb, 512Mb
1Gb
SS
Symbol
t
t
WPRES
t
t
t
t
t
WPRE
t
WPST
t
t
XSNR
XSNR
XSRD
RPST
t
WTR
RRD
VTD
n/a
WR
23
t
Min
-6 (FBGA)
0.25
QH -
200
0.4
0.4
12
15
75
0
0
1
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
Electrical Specifications – DC and AC
DQSQ
Max
0.6
0.6
–
–
–
–
–
–
–
–
–
1
128Mb: x4, x8, x16 DDR SDRAM
t
Min
0.25
-6T (TSOP)
126
200
QH -
0.4
0.4
12
15
75
0
0
1
t
DQSQ
Max
0.6
0.6
–
–
–
–
–
–
–
–
–
t
Min
©2004 Micron Technology, Inc. All rights reserved.
0.25
QH -
200
0.4
0.4
15
15
75
0
0
1
–
-75E
t
DQSQ
Max
0.6
0.6
–
–
–
–
–
–
–
–
–
Units Notes
t
t
t
t
t
CK
ns
ns
CK
ns
CK
ns
CK
ns
ns
CK
ns
21, 22
44
20
26