MT46V8M16TG-75:D Micron Technology Inc, MT46V8M16TG-75:D Datasheet - Page 41
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MT46V8M16TG-75:D
Manufacturer Part Number
MT46V8M16TG-75:D
Description
IC DDR SDRAM 128MBIT 66TSOP
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M8TG-6T_LD_TR.pdf
(81 pages)
Specifications of MT46V8M16TG-75:D
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
128M (8Mx16)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOP
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
140mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT46V8M16TG-75:D
Manufacturer:
MICRON
Quantity:
20 000
PRECHARGE (PRE)
Figure 18:
BURST TERMINATE (BST)
AUTO REFRESH (AR)
SELF REFRESH
PDF: 09005aef816fd013/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 128Mb DDR: Rev. F; Core DDR: Rev. A 4/07 EN
PRECHARGE Command
Notes:
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks as shown in Figure 18. The value on the BA0, BA1 inputs selects
the bank, and the A10 input selects whether a single bank is precharged or whether all
banks are precharged.
1. If A10 is HIGH, bank address becomes “Don’t Care”.
The BURST TERMINATE command is used to truncate READ bursts (with auto
precharge disabled). The most recently registered READ command prior to the BURST
TERMINATE command will be truncated, as shown in “Operations” on page 42. The
open page from which the READ burst was terminated remains open.
AUTO REFRESH is used during normal operation of the DDR SDRAM and is analogous
to CAS#-before-RAS# (CBR) refresh in FPM/EDO DRAMs. This command is nonpersis-
tent, so it must be issued each time a refresh is required. All banks must be idle before an
AUTO REFRESH command is issued.
The SELF REFRESH command can be used to retain data in the DDR SDRAM, even if the
rest of the system is powered down. The SELF REFRESH command is initiated like an
AUTO REFRESH command except CKE is disabled (LOW).
BA0, BA1
ADDRESS
RAS#
CAS#
WE#
CKE
A10
CK#
CS#
CK
HIGH
ALL BANKS
ONE BANK
Bank 1
DON’T CARE
41
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x4, x8, x16 DDR SDRAM
©2004 Micron Technology, Inc. All rights reserved.
Commands