MT41J256M4HX-15E:D TR Micron Technology Inc, MT41J256M4HX-15E:D TR Datasheet - Page 89

• Manufacturer Part Number: MT41J256M4HX-15E:D TR
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr

Specifications of MT41J256M4HX-15E:D TR

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (256M x 4)
• Speed: 667MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-FBGA
• Organization: 256Mx4
• Density: 1Gb
• Address Bus: 17b
• Maximum Clock Rate: 1.333GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 220mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 41: Tangent Line for
PDF: 09005aef826aa906/Source: 09005aef82a357c3
1Gb_DDR3_3.fm - Rev. F 11/08 EN
V
V
V
V
IL
IL
IH
IH
(
(
DC
AC
(
(
AC
DC
V
Notes:
) MAX
) MAX
REF
DQS#
) MIN
) MIN
V
DQS
CK#
DD
(
V
CK
DC
Q
SS
Nominal
)
line
1. Both the clock and the strobe are drawn on different time scales.
V
REF
region
t
to AC
DS (DQ – Strobe)
ΔTF
t DS
t VAC
Tangent
line
Setup slew rate
Setup slew rate
falling signal
rising signal
t DH
89
Nominal
=
=
Micron Technology, Inc., reserves the right to change products or specifications without notice.
line
Tangent line (V
Tangent line (V
ΔTR
1Gb: x4, x8, x16 DDR3 SDRAM
t DS
t VAC
Tangent
REF
IH
ΔTR
ΔTF
line
V
[
AC
[
REF
DC
region
t DH
] MIN - V
] - V
to AC
©2006 Micron Technology, Inc. All rights reserved.
IL
[
AC
] MAX)
REF
Speed Bin Tables
[
DC
])