NAND512W3A2CN6E NUMONYX, NAND512W3A2CN6E Datasheet - Page 38

• Manufacturer Part Number: NAND512W3A2CN6E
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND512W3A2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

DC and AC parameters
Table 21.
1. ES = electronic signature.
2. During a program/erase enable operation, t
38/55
Symbol
t
t
t
VLWH
t
t
t
t
t
t
t
ALLRL1
ALLRL2
t
t
t
t
t
t
t
t
t
t
t
BLBH1
BLBH2
BLBH3
BLBH4
t
t
CLLRL
WHBH
VHWH
RHQX
WHBL
WHRL
EHQZ
RHQZ
EHQX
BHRL
DZRL
ELQV
RHRL
RLRH
RLQV
RLRL
operation, t
(2)
symbol
t
t
t
PROG
VLWH
BERS
t
t
t
t
t
t
t
T
t
WHR
Alt.
t
AC characteristics for operations
t
t
REH
t
t
RST
CLR
CHZ
CEA
RHZ
REA
WW
t
WB
AR
RR
RP
RC
t
OH
IR
R
is the delay from WP Low to W High.
Address Latch Low to
Read Enable Low
Ready/Busy High to Read Enable Low
Ready/Busy Low to
Ready/Busy High
Command Latch Low to Read Enable Low
Data Hi-Z to Read Enable Low
Chip Enable High to Output Hi-Z
Chip Enable Low to Output Valid
Read Enable High to
Read Enable Low
Read Enable High to Output Hi-Z
Chip Enable High or Read Enable High to Output Hold
Read Enable Low to
Read Enable High
Read Enable Low to
Read Enable Low
Read Enable Low to
Output Valid
Write Enable High to
Ready/Busy High
Write Enable High to Ready/Busy Low
Write Enable High to Read Enable Low
Write protection time
VHWH
Read electronic signature
Read cycle
Read busy time
Program busy time
Erase busy time
Reset busy time, during ready
Reset busy time, during read
Reset busy time, during program
Reset busy time, during erase
Read Enable High hold time
Read Enable pulse width
Read cycle time
Read Enable access time
Read ES access time
Read busy time
is the delay from WP High to W High. During a program/erase disable
Parameter
(1)
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
devices
1.8 V
500
500
100
100
10
10
20
15
10
10
30
45
15
30
10
25
50
30
15
60
3
5
5
0
NAND512-A2C
devices
500
500
100
100
3 V
10
10
20
12
10
10
30
35
10
30
10
15
30
18
12
60
3
5
5
0
Unit
ms
ns
ns
ns
µs
µs
µs
µs
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns