NAND512W3A2CN6E NUMONYX, NAND512W3A2CN6E Datasheet - Page 51
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NAND512W3A2CN6E
Manufacturer Part Number
NAND512W3A2CN6E
Description
IC FLASH 512MBIT 48TSOP
Manufacturer
NUMONYX
Datasheet
1.NAND512R3A2CZA6E.pdf
(55 pages)
Specifications of NAND512W3A2CN6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
512M (64M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Cell Type
NAND
Density
512Mb
Access Time (max)
12us
Interface Type
Parallel
Boot Type
Not Required
Address Bus
26b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
64M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND512W3A2CN6E
Manufacturer:
MICRON
Quantity:
1 500
Part Number:
NAND512W3A2CN6E
Manufacturer:
ST
Quantity:
20 000
NAND512-A2C
Table 23.
Symbol
FD1
FE1
ddd
FD
SD
SE
A1
A2
D1
D2
E1
E2
FE
D
A
E
b
e
VFBGA55 8 x 10 x 1.05 mm - 6 x 8 +7 active ball array, 0.8 mm pitch, mechanical data
10.00
0.65
0.45
8.00
4.00
5.60
5.60
8.80
2.00
1.20
2.20
0.60
Typ
millimeters
0.25
0.40
7.90
9.90
Min
0.80
0.40
0.40
10.10
Max
1.05
0.50
8.10
0.10
0.026
0.018
0.315
0.157
0.220
0.394
0.220
0.346
0.079
0.047
0.087
0.024
Typ
0.010
0.016
0.311
0.390
Min
inches
0.031
0.016
0.016
Package mechanical
0.041
0.020
0.319
0.004
0.398
Max
51/55