NAND512W3A2CN6E NUMONYX, NAND512W3A2CN6E Datasheet - Page 54

• Manufacturer Part Number: NAND512W3A2CN6E
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND512W3A2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Revision history
13
54/55
Revision history
Table 26.
14-May-2008
24-Sep-2008
08-Feb-2007
19-Mar-2008
26-Oct-2006
09-Jun-2009
Date
Document revision history
Revision
0.1
1
2
3
4
5
Initial release.
Datasheet status upgraded to ‘full datasheet’.
USOP48 package removed.
Data integrity of 100,000 specified for ECC implemented.
t
Added: t
operations, note 2 below the same table,
enable waveforms
Modified:
failure in
V
Read status register AC
Minor text changes.
Applied Numonyx branding.
Added the sequential row read option and the package VFBGA55
throughout the document.
Document status upgraded from ‘full datasheet’ to ‘not for new
design’. Added security features on the cover page and in
Description. Updated
Figure 35: Resistor value versus waveform timings for Ready/Busy
signal. References to ECOPACK removed and replaced by RoHS
compliance. Modified dimension A2 of the VFBGA55 and VFBGA63
packages in
part number throughout the document.
WHBH1
LKO
in
removed from
Table 19: DC characteristics, 3 V devices
vHWH
Table 13: NAND flash failure
Section 3.9: Ready/Busy
Table 23
and t
and
VLWH
and
Figure 33: Ready/Busy AC waveform
Table 21: AC characteristics for
Figure 32: Program/erase disable
waveforms.
in
Table
Table 21: AC characteristics for
Changes
24. Removed NAND512W4A2C root
(RB), procedure for program
modes, maximum value for
Figure 31: Program/erase
and
NAND512-A2C
operations.
Figure 24:
waveforms.
Section 1:
and