TC55VBM316AFTN55 Toshiba, TC55VBM316AFTN55 Datasheet - Page 12

• Manufacturer Part Number: TC55VBM316AFTN55
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VBM316AFTN55

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TC55W800FT-55(M); TC55W800FT-55M; TC55W800FT5(M); TC55W800FT5(MWR); TC55W800FT5(Y); TC55W800FT55(M); TC55W800FT55(MWR); TC55W800FT55M; TC55W800FT55MLA; TC55W800FT5M; TC55W800FT5M; TC55W800FT5Y; TC55W800FT5Y

Note:
(1)
(2)
(3)
(4)
(5)
In CE1 controlled data retention mode, minimum standby current mode is entered when CE2 0.2 V or
CE2 V
When CE1 is operating at the V
transition of V
In CE2 controlled data retention mode, minimum standby current mode is entered when CE2 0.2 V.
In UB (or LB ) controlled data retention mode, minimum standby current mode is entered when CE1
When UB (or LB ) is operating at the V
the transition of V
0.2 V or CE1
DD
0.2 V.
DD
from 2.3(2.7) to 2.2V(2.4 V).
V
DD
DD
from 2.3(2.7) to 2.2V(2.4 V).
0.2 V, CE2 0.2 V or CE2 V
IH
(min.) level, the operating current is given by I
IH
(min.) level, the operating current is given by I
DD
TC55VBM316AFTN/ASTN40,55
0.2 V.
2002-08-05 12/15
DDS1
DDS1
during the
during