TC55VBM316AFTN55 Toshiba, TC55VBM316AFTN55 Datasheet - Page 6

• Manufacturer Part Number: TC55VBM316AFTN55
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VBM316AFTN55

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TC55W800FT-55(M); TC55W800FT-55M; TC55W800FT5(M); TC55W800FT5(MWR); TC55W800FT5(Y); TC55W800FT55(M); TC55W800FT55(MWR); TC55W800FT55M; TC55W800FT55MLA; TC55W800FT5M; TC55W800FT5M; TC55W800FT5Y; TC55W800FT5Y

AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
Note:
RC
ACC
CO1
CO2
OE
BA
COE
OEE
BE
OD
ODO
BD
OH
WC
WP
CW
BW
AS
WR
ODW
OEW
DS
DH
SYMBOL
SYMBOL
40° to 85°C, V
t
an output voltage level.
OD
, t
ODO
Read Cycle Time
Address Access Time
Chip Enable(
Chip Enable(CE2) Access Time
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Output Data Hold Time
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Data Byte Control to End of Write
Address Setup Time
Write Recovery Time
R/W Low to Output High-Z
R/W High to Output Active
Data Setup Time
Data Hold Time
, t
BD
and t
DD
ODW
CE ) Access Time
2.3 to 3.6 V)
1
are specified in time when an output becomes high impedance, and are not judged depending on
PARAMETER
PARAMETER
TC55VBM316AFTN/ASTN40,55
MIN
MIN
55
55
40
45
45
25
10
5
0
5
0
0
0
0
TC55VBM316AFTN/ASTN
TC55VBM316AFTN/ASTN
40
40
MAX
MAX
55
55
55
30
55
25
25
25
25
2002-08-05 6/15
MIN
MIN
70
10
70
50
55
55
30
5
0
5
0
0
0
0
55
55
MAX
MAX
70
70
70
35
70
30
30
30
30
UNIT
UNIT
ns
ns