TC55VBM316AFTN55 Toshiba, TC55VBM316AFTN55 Datasheet - Page 7

• Manufacturer Part Number: TC55VBM316AFTN55
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VBM316AFTN55

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TC55W800FT-55(M); TC55W800FT-55M; TC55W800FT5(M); TC55W800FT5(MWR); TC55W800FT5(Y); TC55W800FT55(M); TC55W800FT55(MWR); TC55W800FT55M; TC55W800FT55MLA; TC55W800FT5M; TC55W800FT5M; TC55W800FT5Y; TC55W800FT5Y

BYTE
AC TEST CONDITIONS
Fig.1 : Input rise and fall time
TIMING DIAGRAMS
V
DD
Input pulse level
t
Timing measurements
Reference level
Output load
t
t
BYTE
R
BS
BR
GND
, t
SYMBOL
Typ
F
FUNCTION
1 V/ns
BYTE
CE2
CE
10%
1
BYTE Setup Time
BYTE Recovery Time
t
R
90%
PARAMETER
PARAMETER
t
BS
t
F
90%
10%
1 V/ns
TC55VBM316AFTN/ASTN40,55
Fig.2 : Output load
t
BR
0.2 V, V
30 pF
Dout
30 pF
TEST CONDITION
1V / ns(Fig.1)
DD
V
V
MIN
1 TTL Gate(Fig.2)
5
5
DD
DD
V
0.7 V
TM
0.5
0.5
R1
R2
2002-08-05 7/15
0.2 V
MAX
R1
R2
V
TM
1610
810
2.3 V
UNIT
ms
ms