MC34704AEP Freescale Semiconductor, MC34704AEP Datasheet - Page 10

• Manufacturer Part Number: MC34704AEP
• Description: IC POWER MANAGEMENT 56-QFN
• Manufacturer: Freescale Semiconductor

Specifications of MC34704AEP

• Applications: Processor
• Current - Supply: 86mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 56-QFN
• Output Voltage: 5 V
• Input Voltage: 2.7 V to 5.5 V
• Switching Frequency: 750 KHz to 2 MHz
• Mounting Style: SMD/SMT
• Number Of Outputs: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 4. Static Electrical Characteristics (continued)
values noted reflect the approximate parameter means at T
10
34704
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
REGULATOR 2
REGULATOR 3
Notes:
Output Voltage Range
Output Accuracy
Line/Load Regulation
Feedback Reference Voltage
Dynamic Voltage Scaling Range
Dynamic Voltage Scaling Step Size
Continuous Output Current
Over-current Limit (Detected in buck high side FET)
Short-circuit Current Limit (Detected in buck high side FET)
Battery Over-current Limit Accuracy
N-CH Buck Switch Power MOSFET R
N-CH Buck Synch. Power MOSFET R
N-CH Boost Switch Power MOSFET R
N-CH Boost Synch. Power MOSFET R
Discharge MOSFET R
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
PVIN2 Leakage Current (Off State) @25°C
SW2D Leakage Current (Off State) @25°C
SW2U Leakage Current (Off State) @25°C
Output Voltage Range
Output Accuracy
Line/Load Regulation
Feedback Reference Voltage
Dynamic Voltage Scaling Range
Dynamic Voltage Scaling Step Size
Continuous Output Current
Over-current Limit (Detected in buck high side FET)
Short-circuit Current Limit (Detected in buck high side FET)
Over-current Limit Accuracy
N-CH Switch Power MOSFET R
N-CH Synch. Power MOSFET R
Discharge MOSFET R
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
PVIN3 Leakage Current (Off State) @25°C
SW3 Leakage Current (Off State) @25°C
11.
12.
Characteristics noted under conditions 2.7 V ≤ V
Guaranteed by Design
V
FB
is 0.6V when the part ist powered up and no DVS is changed. DVS is achieved by modifying V
(11)
(11)
DS(ON)
DS(ON)
(11)
(11)
Characteristic
(11)
(11)
(11)
(11)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
IN
≤ 5.5 V, - 20°C ≤ T
A
= 25°C under nominal conditions, unless otherwise noted.
R
R
R
I
R
R
V
I
R
R
V
I
R
PVIN2G_LKG
I
I
I
REG
REG
SHORT_ION
SHORT_ION
SW2D_LKG
SW2U_LKG
PVIN3_LKG
I
DS(ON)
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Symbol
DYN_STEP
DS(ON)
DS(ON)
T
DYN_STEP
DS(ON)
T
SW3_LKG
I
I
LIM_ION
LIM_ION
A
SD-HYS
SD-HYS
V
V
V
V
I
I
V
T
V
T
OUT
OUT
OUT
DYN
OUT
DYN
FB
SD
FB
SD
≤ 85°C, GND = 0 V, unless otherwise noted. Typical
-
-
-
-
LN/LD
LN/LD
-
-
-
-
-
-
-
-
SW
SW
DIS
SW
DIS
SY
SY
SY
-17.5
-17.5
Min
-2.0
-1.0
-4.0
-1.0
0.6
-20
0.6
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Analog Integrated Circuit Device Data
FB
0.600
0.600
1000
Typ
200
120
120
120
170
150
500
500
170
3.3
2.5
1.4
2.1
1.2
2.5
1.0
1.5
reference.
70
25
70
25
-
-
-
-
-
-
-
-
-
-
-
-
-
(12)
(12)
Freescale Semiconductor
Max
17.5
17.5
500
550
3.6
2.0
1.0
1.0
1.0
1.0
1.8
4.0
1.0
1.0
1.0
20
20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mA
mA
μA
μA
μA
μA
μA
°C
°C
°C
°C
%
%
%
%
%
Ω
%
%
%
%
%
Ω
V
V
A
A
V
V
A
A