MT36LSDF12872G-133D1 Micron Technology Inc, MT36LSDF12872G-133D1 Datasheet - Page 18

• Manufacturer Part Number: MT36LSDF12872G-133D1
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36LSDF12872G-133D1

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168RDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 2.466A
• Number Of Elements: 36
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

PDF: 09005aef807da15c/Source: 09005aef80f69382
SDF36C64_128x72G.fm - Rev. E 10/05 EN
23. The clock frequency must remain constant (stable clock is defined as a signal cycling
24. Auto precharge mode only. The precharge timing budget (
25. Precharge mode only.
26. JEDEC specifies three clocks.
27.
28. Parameter guaranteed by design.
29. For -133, CL = 3 and
30. CKE is HIGH during refresh command period
31. Refer to device data sheet for timing waveforms.
32. The value for
33. This AC timing function will show an extra clock cycle when in registered mode.
34. Leakage number reflects the worst case leakage possible through the module pin, not
within timing constraints specified for the clock pin) during access or precharge
states (READ, WRITE, including
used to reduce the data rate.
and 7.5ns for -133 after the first clock delay, after the last WRITE is executed.
t
limit is actually a nominal value and does not result in a fail value.
what each memory device contributes.
AC for -133/-13E at CL = 3 with no load is 4.6ns and is guaranteed by design.
t
RAS used in -13E speed grade modules is calculated from
512MB, 1GB (x72, ECC, DR): 168-Pin SDRAM RDIMM
t
CK = 7.5ns; for -13E, CL = 2 and
18
t
WR, and PRECHARGE commands). CKE may be
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RFC (MIN) else CKE is LOW. The I
t
CK = 7.5ns.
t
RP) begins at 7ns for -13E;
©2003 Micron Technology, Inc. All rights reserved.
t
RC -
t
Notes
RP.
DD
6