MT36LSDF12872G-133D1 Micron Technology Inc, MT36LSDF12872G-133D1 Datasheet - Page 25

• Manufacturer Part Number: MT36LSDF12872G-133D1
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36LSDF12872G-133D1

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168RDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 2.466A
• Number Of Elements: 36
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 22:
PDF: 09005aef807da15c/Source: 09005aef80f69382
SDF36C64_128x72G.fm - Rev. E 10/05 EN
36–40
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
0
1
2
3
4
5
6
7
8
9
Description
Number of bytes used by Micron
Total number of SPD memory bytes
Memory type
Number of row addresses
Number of column addresses
Number of module ranks
Module data width
Module data width (continued)
Module voltage interface levels
SDRAM cycle time,
SDRAM access from CLK,
Module configuration type
Refresh rate/type
SDRAM width (primary SDRAM)
Error-checking SDRAM data width
Minimum clock delay from back-to-back random
column addresses,
Burst lengths supported
Number of banks on SDRAM device
CAS latencies supported
CS latency
WE latency
SDRAM module attributes
SDRAM device attributes: General
SDRAM cycle time,
SDRAM access from CLK,
SDRAM cycle time,
SDRAM access from CLK,
Minimum row precharge time,
Minimum row active to row active,
Minimum RAS# to CAS# delay,
Minimum RAS# pulse width,
Module rank density
Command and address setup time,
Command and Aaddress hold time,
Data signal input setup time,
Data signal input hold time,
Reserved
Serial Presence-Detect Matrix
“1”/”0”: Serial data, “driven to HIGH”/”driven to LOW”; V
t
t
t
t
CCD
CK (CL = 3)
CK (CL = 2)
CK (CL = 1)
t
t
t
AC (CL = 3)
AC (CL = 2)
AC (CL = 1)
t
t
DH
RAS (see note 1)
t
DS
t
t
RCD
RP
t
t
t
AS,
RRD
AH,
t
CMS
t
CMH
512MB, 1GB (x72, ECC, DR): 168-Pin SDRAM RDIMM
25
Entry (Version)
15.6µs or 7.81µs/
5.4ns (-13E/-133)
1.5ns (-13E/-133)
0.8ns (-13E/-133)
1.5ns (-13E/-133)
0.8ns (-13E/-133)
256MB / 512MB
1, 2, 4, 8, PAGE
7.5ns (-133)
7.5ns (-13E)
5.4ns (-13E)
10ns (-133)
15ns (-13E)
20ns (-133)
14ns (-13E)
15ns (-133)
15ns (-13E)
20ns (-133)
45ns (-13E)
44ns (-133)
7ns (-13E)
6ns (-133)
-13E/-133
12 or 13
SDRAM
LVTTL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SELF
ECC
128
256
2, 3
11
72
0E
—
—
DD
2
0
4
4
1
4
0
0
= +3.3V ±0.3V
MT36LSDF6472
A0
2D
Serial Presence-Detect
80
08
04
0C
0B
02
48
00
01
70
75
54
02
80
04
04
01
04
06
01
01
0E
75
54
60
00
00
14
0E
14
2C
40
15
08
15
08
00
8F
1F
0F
0F
0F
©2003 Micron Technology, Inc. All rights reserved.
MT36LSDF12872
0D
A0
2D
80
08
04
0B
02
48
00
01
70
75
54
02
82
04
04
01
04
06
01
01
0E
75
54
60
00
00
14
0E
14
2C
80
15
08
15
08
00
8F
1F
0F
0F
0F