MT9HTF6472AY-800D1 Micron Technology Inc, MT9HTF6472AY-800D1 Datasheet - Page 32

• Manufacturer Part Number: MT9HTF6472AY-800D1
• Description: MODULE DDR2 512MB 240-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9HTF6472AY-800D1

• Memory Type: DDR2 SDRAM
• Memory Size: 512MB
• Speed: 800MT/s
• Package / Case: 240-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18:
pdf: 09005aef80e6f860, source: 09005aef80e5b799
HTF9C32_64_128x72AG_2.fm - Rev. C 6/05 EN
DQS input high pulse width
DQS input low pulse width
DQS output access time from CK/
CK#
DQS falling edge to CK rising –
setup time
DQS falling edge from CK rising
– hold time
DQS–DQ skew, DQS to last DQ
valid, per group, per access
DQS read preamble
DQS read postamble
DQS write preamble setup time
DQS write preamble
DQS write postamble
Write command to first DQS
latching transition
Parameter
AC Operating Conditions (Sheet 2 of 4)
Notes: 1–5; notes appear on page 35; 0°C ≤ T
AC Characteristics
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 SDRAM UDIMM
Symbol
t
t
t
t
DQSCK
t
WPRES
t
t
t
t
DQSQ
t
DQSH
WPRE
t
WPST
DQSL
DQSS
t
RPRE
RPST
DSH
DSS
MIN
WL -
0.35
0.35
-400
0.35
0.25
0.2
0.2
0.9
0.4
0.4
0
-667
CASE
32
MAX
WL +
+400
0.25
240
1.1
0.6
0.6
≤ +85°C; V
MIN
WL -
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.35
0.35
-450
0.25
0.25
0.2
0.2
0.9
0.4
0.4
AC Timing and Operating Conditions
0
DD
-53E
Q = +1.8V ±0.1V, V
MAX
WL +
+450
0.25
300
1.1
0.6
0.6
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
MIN
WL -
-500
0.35
0.35
0.25
0.25
0.2
0.2
0.9
0.4
0.4
0
-40E
DD
= +1.8V ±0.1V
MAX
+500
WL +
0.25
350
1.1
0.6
0.6
Units
t
t
t
t
t
t
t
t
t
CK
CK
ps
CK
CK
ps
CK
CK
ps
CK
CK
CK
12, 13,
Notes
15, 17
36
36
37
11