MT9HTF6472AY-800D1 Micron Technology Inc, MT9HTF6472AY-800D1 Datasheet - Page 40

MODULE DDR2 512MB 240-DIMM

MT9HTF6472AY-800D1

Manufacturer Part Number
MT9HTF6472AY-800D1
Description
MODULE DDR2 512MB 240-DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9HTF6472AY-800D1

Memory Type
DDR2 SDRAM
Memory Size
512MB
Speed
800MT/s
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 19:
Table 20:
Figure 15:
pdf: 09005aef80e6f860, source: 09005aef80e5b799
HTF9C32_64_128x72AG_2.fm - Rev. C 6/05 EN
SDA OUT
Select Code
Mode
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
256MB, 512MB, 1GB (x72, SR, ECC) 240-Pin DDR2 SDRAM UDIMM
RW Bit
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
b7
IL
IL
IL
IL
t HIGH
1
0
t HD:DAT
Device Type Identifier
Bytes
≤ 16
40
≥ 1
1
1
1
1
b6
0
1
t DH
Initial Sequence
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
b4
0
0
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
SA2
SA2
b3
Serial Presence-Detect
Chip Enable
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0

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