EVL6563S-400W STMicroelectronics, EVL6563S-400W Datasheet - Page 26

EVAL BOARD FOR L6563(400W)

EVL6563S-400W

Manufacturer Part Number
EVL6563S-400W
Description
EVAL BOARD FOR L6563(400W)
Manufacturer
STMicroelectronics
Type
Motor / Motion Controllers & Driversr
Datasheets

Specifications of EVL6563S-400W

Main Purpose
Power Management, Power Factor Correction
Embedded
No
Utilized Ic / Part
L6563
Primary Attributes
400W Power Factor Correction and Preregulator Combination
Secondary Attributes
Transition Mode & Active Tracking Boost Function.
Maximum Operating Temperature
+ 60 C
Product
Power Management Development Tools
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
L6563S
Other names
497-10488

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Layout hints
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Layout hints
The layout of any converter is a very important phase in the design process that sometimes
does not get the required attention by engineers. Even if the layout phase is sometimes
time-consuming, a good layout saves time during the functional debugging and qualification
phases. Additionally, a power supply circuit with a correct layout needs smaller EMI filters or
less filter stages and therefore contributes to money saving.
The L6563S does not require any specific attention to the layout. General layout rules for
any power converter have to be applied carefully. These basic rules are listed below, taking
the EVL6563S-400W schematic as reference. They can be used for other PFC circuits with
any power level, working either in FOT or TM control mode.
1.
2.
3.
4.
5.
6.
7.
Keep the power and signal RTN separate. Connect the return pins of the component
carrying the high current, such as the C4, C5 input filter, sense resistors, C6 and C7
output capacitor, as close as possible. This point will be the RTN’s start point. A
downstream converter will have to be connected to this return point.
Minimize the length of the traces relevant to L3, boost inductor L4, MOSFET drain,
boost rectifier D4 and output capacitors C6 and C7.
Keep signal components as close as possible to each relevant pin of the L6563S. Keep
the tracks relevant to pin #1 (INV) as short as possible. Components and traces
relevant to the error amplifier have to be placed far from traces and connections
carrying signals with high dv/dt like the MOSFET drains (Q1 and Q2).
Connect heat sinks to the power GND.
Add an external shield to the boost inductor and connect it to the power GND.
Connect the RTN of the signal components, including the feedback, PFC_OK and
MULT dividers, close to the L6563S’ pin #12 (GND).
Connect a ceramic capacitor (100÷470 nF) to pin #14 (Vcc) and to pin #12 (GND),
close to the L6563S. Connect this point to the RTN’s start point (see 1).
Doc ID 15796 Rev 2
AN2994

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