KIT33927EKEVBE Freescale Semiconductor, KIT33927EKEVBE Datasheet - Page 22

• Manufacturer Part Number: KIT33927EKEVBE
• Description: KIT EVALUATION FOR MC33927
• Manufacturer: Freescale Semiconductor
• Series: SMARTMOS™r
• Type: Other Power Managementr

Specifications of KIT33927EKEVBE

• Main Purpose: Power Management, FET Driver (External FET)
• Embedded: No
• Utilized Ic / Part: MC33927
• Primary Attributes: *
• Secondary Attributes: 8 V ~ 40 V Supply
• Interface Type: SPI
• Product: Power Management Modules
• Silicon Manufacturer: Freescale
• Silicon Core Number: MC33927
• Kit Application Type: Power Management
• Application Sub Type: FET Driver
• Kit Contents: Board, CD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With/related Products: MC33927

PHASE C LOW-SIDE GATE (PC_LS_G)
It provides a high current with a low impedance to turn on and
off the low side FET. A low impedance drive ensures
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FET. This output
has been designed to resist the influence of negative currents
also.
PHASE C HIGH-SIDE SOURCE (PC_HS_S)
FET is the reference voltage for the gate drive on the high
side FET and also the low voltage end of the bootstrap
capacitor.
PHASE C HIGH-SIDE GATE (PC_HS_G)
This pin provides the gate bias to turn the external FET on or
off. The gate voltage is limited to about 15V above the FET
source voltage. A low impedance drive is used, ensuring
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FETs. This
output has been designed to resist the influence of negative
currents also.
PHASE C BOOTSTRAP (PC_BOOT)
capacitor (typically 0.1µF) connected between PC_HS_S
and this pin provides the gate voltage and current to drive the
external FET gate. The voltage across this capacitor is limited
to about 15V.
PHASE B GROUND (PGNDB)
gate currents from the low side FET. Best performance is
normally realized by connecting this node directly to the
source of the low side FET for phase B.
PHASE B LOW-SIDE GATE (PC_LS_G)
It provides a high current with a low impedance to turn on and
off the low side FET. A low impedance drive ensures
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FET. This output
has been designed to resist the influence of negative currents
also.
PHASE B HIGH-SIDE SOURCE (PB_HS_S)
FET is the reference voltage for the gate drive on the high
side FET and also the low voltage end of the bootstrap
capacitor.
22
33927
FUNCTIONAL DESCRIPTIONS
INTRODUCTION
This is the gate drive for the phase C low side output FET.
The source connection for the phase C high side output
This is the gate drive for the phase C high side output FET.
This is the bootstrap capacitor connection for phase C. A
The phase B power ground is the pin used to return the
This is the gate drive for the phase B low side output FET.
The source connection for the phase B high side output
PHASE B HIGH-SIDE GATE (PB_HS_G)
This pin provides the gate bias to turn the external FET on or
off. The gate voltage is limited to about 15V above the FET
source voltage. A low impedance drive is used, ensuring
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FETs. This
output has been designed to resist the influence of negative
currents also.
PHASE B BOOTSTRAP (PB_BOOT)
capacitor (typically 0.1µF) connected between PB_HS_S and
this pin provides the gate voltage and current to drive the
external FET gate. The voltage across this capacitor is limited
to about 15V.
PHASE A GROUND (PGNDA)
gate currents from the low side FET. Best performance is
normally realized by connecting this node directly to the
source of the low side FET for phase A.
PHASE A LOW-SIDE GATE (PA_LS_G)
It provides a high current with a low impedance to turn on and
off the low side FET. A low impedance drive ensures
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FET. This output
has been designed to resist the influence of negative currents
also.
PHASE A HIGH-SIDE SOURCE (PA_HS_S)
FET is the reference voltage for the gate drive on the high
side FET and also the low voltage end of the bootstrap
capacitor.
PHASE A HIGH-SIDE GATE (PA_HS_G)
This pin provides the gate bias to turn the external FET on or
off. The gate voltage is limited to about 15V above the FET
source voltage. A low impedance drive is used, ensuring
transient currents do not overcome an off-state driver and
allow pulses of current to flow in the external FETs. This
output has been designed to resist the influence of negative
currents also.
PHASE A BOOTSTRAP (PA_BOOT)
capacitor (typically 0.1µF) connected between PA_HS_S and
this pin provides the gate voltage and current to drive the
external FET gate. The voltage across this capacitor is limited
to about 15V.
This is the gate drive for the phase B high side output FET.
This is the bootstrap capacitor connection for phase B. A
The phase A power ground is the pin used to return the
This is the gate drive for the phase A low side output FET.
The source connection for the phase A high side output
This is the gate drive for the phase A high side output FET.
This is the bootstrap capacitor connection for phase A. A
Analog Integrated Circuit Device Data
Freescale Semiconductor