HD6413003TF16V Renesas Electronics America, HD6413003TF16V Datasheet - Page 168

• Manufacturer Part Number: HD6413003TF16V
• Description: MCU 5V 0K PB-FREE 112-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD6413003TF16V

• Core Size: 16-Bit
• Oscillator Type: Internal
• Core Processor: H8/300H
• Speed: 16MHz
• Connectivity: SCI
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 50
• Program Memory Type: ROMless
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-QFP
• No. Of I/o's: 58
• Ram Memory Size: 512Byte
• Cpu Speed: 16MHz
• No. Of Timers: 11
• No. Of Pwm Channels: 4
• Digital Ic Case Style: QFP
• Supply Voltage: RoHS Compliant
• Controller Family/series: H8/300H
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2CAS and 2WE Modes: The CAS/WE bit in RFSHCR can select two control modes for 16-bit-
wide DRAM: one using UCAS and LCAS; the other using UW and LW. These DRAM pins
correspond to H8/3003 pins as shown in table 7-6.
Table 7-6 DRAM Pins and H8/3003 Pins
H8/3003 Pin
HWR
LWR
RD
CS
Figure 7-5 (1) shows the interface timing for 2WE DRAM. Figure 7-5 (2) shows the interface
timing for 2CAS DRAM.
ø
(
(
(
(
Note:
Address
bus
3
CS
RAS
RD
CAS
HWR
UW
LWR
LW
RFSH
AS
3
)
)
)
)
*
16-bit access
Figure 7-5 DRAM Control Signal Output Timing (1) (2WE Mode)
Row
Read cycle
CAS/WE = 0 (2WE mode)
UW
LW
CAS
RAS
Column
Row
Write cycle
148
Column
DRAM Pin
*
CAS/WE = 1 (2CAS mode)
UCAS
LCAS
WE
RAS
Area 3 top address
Refresh cycle