PC28F256J3F95A NUMONYX, PC28F256J3F95A Datasheet - Page 59

• Manufacturer Part Number: PC28F256J3F95A
• Description: IC FLASH 256MBIT 95NS 64EZBGA
• Manufacturer: NUMONYX
• Series: StrataFlash™r

Specifications of PC28F256J3F95A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (32M x8, 16M x16)
• Speed: 95ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Cell Type: NOR
• Density: 256Mb
• Access Time (max): 95ns
• Interface Type: Parallel
• Address Bus: 25/24Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: EZBGA
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 32M/16M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 64
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 898244; 898244; PC28F256J3F95 898244

Numonyx™ StrataFlash
Figure 19: Buffer Program Flowchart
December 2008
319942-02
Yes
Read Status Register
Read Status Register
Issue Write to Buffer
Command E8h and
and Block Address
(at Block Address)
Write Word Count,
Write Confirm D0h
Program Complete
Write Buffer Data,
Is WSM Ready?
Another Buffered
Check if Desired
Supports Buffer
Target Address
Set Timeout or
Block Address
Block Address
Programming?
Loop Counter
Start Address
Full Status
Get Next
X = N?
SR.7 =?
Writes?
SR.7 =
Device
X = 0
Start
1 = Yes
Yes
Yes
No
1
®
No
No
Embedded Memory (J3-65nm)
Write Buffer Data,
Buffered Program
Use Single Word
Write to another
Abort Bufferred
Block Address
Block Address
Programming
Program?
X = X + 1
Expired?
or Count
Timeout
Suspend
Aborted
Program
No
No
Yes
No
Yes
Yes
Suspend
Program
Loop
1. Word count values on DQ
register. Count ranges for this device are N = 0000h to 0001Fh.
2. The device outputs the status register when read.
3. Write Buffer contents will be programmed at the device start
address or destination flash address.
4. Align the start address on a Write Buffer boundary for
maximum programming performance (i.e., A
address = 0).
5. The device aborts the Buffered Program command if the
current address is outside the original block address.
6. The Status register indicates an "improper command
sequence" if the Buffered Program command is aborted. Follow
this with a Clear Status Register command.
Full status check can be done after all erase and write
sequences complete. Write FFh after the last operation to reset
the device to read array mode.
(Notes 1, 2)
(Notes 3, 4)
(Notes 5, 6)
Operation
Standby
Standby
Read
Read
Write
Write
Write
Write
Write
Bus
Command
Program
Confirm
Write to
Buffer
0
-DQ
Data = E8H
Addr = Block Address
SR.7 = Valid
Addr = Block Address
Check SR.7
1 = Device WSM is Busy
0 = Device WSM is Ready
Data = N-1 = Word Count
N = 0 corresponds to count = 1
Addr = Block Address
Data = Write Buffer Data
Addr = Start Address
Data = Write Buffer Data
Addr = Block Address
Data = D0H
Addr = Block Address
Status register Data
CE# and OE# low updates SR
Addr = Block Address
Check SR.7
1 = WSM Ready
0 = WSM Busy
7
are loaded into the Count
Comments
4
–A
0
of the start
Datasheet
59