SUD50N04-05L-E3 Vishay, SUD50N04-05L-E3 Datasheet
SUD50N04-05L-E3
Specifications of SUD50N04-05L-E3
Related parts for SUD50N04-05L-E3
SUD50N04-05L-E3 Summary of contents
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... GS 40 0.0069 4 TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N04-05L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Repetitive Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...
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... SUD50N04-05L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reversen Transfer Capacitance c Total Gate Charge ...
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... Drain-to-Source Voltage (V) DS Capacitance Document Number: 72786 S-71661-Rev. B, 06-Aug-07 New Product 120 4 V 100 0.010 °C C 0.008 25 °C 0.006 125 °C 0.004 0.002 0.000 SUD50N04-05L Vishay Siliconix 125 ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUD50N04-05L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS 125 100 75 50 Limited By Package 100 T - Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...