SUD50N04-05L-E3 Vishay, SUD50N04-05L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUD50N04-05L-E3
• Description: MOSFET N-CH D-S 40V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N04-05L-E3

• Input Capacitance (ciss) @ Vds: 5600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 115A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 135nC @ 10V
• Power - Max: 136W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 115 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Document Number: 91000
www.vishay.com
Revision: 18-Jul-08
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