SUD50N04-05L-E3 Vishay, SUD50N04-05L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N04-05L-E3
• Description: MOSFET N-CH D-S 40V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N04-05L-E3

• Input Capacitance (ciss) @ Vds: 5600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 115A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 135nC @ 10V
• Power - Max: 136W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 115 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SUD50N04-05L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
www.vishay.com
4
http://www.vishay.com/ppg?72786.
0.01
0.1
125
100
2.0
1.7
1.4
1.1
0.8
0.5
75
50
25
2
1
10 -
0
- 50 - 25
0
Duty Cycle = 0.5
0.2
0.1
4
On-Resistance vs. Junction Temperature
Maximum Avalanche and Drain Current
V
I
D
GS
= 20 A
25
Limited By Package
Single Pulse
= 10 V
0.05
T
0
0.02
J
T
50
C
vs. Case Temperature
- Junction Temperature (°C)
- Case Temperature (°C)
25
75
50
75
100
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Case
100
125
125
150
150
Square Wave Pulse Duration (sec)
New Product
175
175
10 -
2
100
200
100
0.1
10
10
1
1
0.1
Limited by r
Source-Drain Diode Forward Voltage
V
0.3
V
T
SD
DS
J
= 150 °C
DS(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
- Source-to-Drain Voltage (V)
Single Pulse
10 -
T
C
1
= 25 °C
1
0.6
S-71661-Rev. B, 06-Aug-07
0.9
Document Number: 72786
T
J
= 25 °C
10
1.2
1
50
1.5
10 µs
100 µs
1 ms
10 ms
100 ms
dc