SUD50N04-05L-E3 Vishay, SUD50N04-05L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N04-05L-E3
• Description: MOSFET N-CH D-S 40V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N04-05L-E3

• Input Capacitance (ciss) @ Vds: 5600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 115A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 135nC @ 10V
• Power - Max: 136W
• Mounting Type: *
• Package / Case: *
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0054 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 115 A
• Power Dissipation: 136 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72786
S-71661-Rev. B, 06-Aug-07
8000
7000
6000
5000
4000
3000
2000
1000
200
160
120
120
100
80
60
40
20
80
40
0
0
0
0
0
0
C
rss
V
GS
10
V
2
V
8
V
= 10 thru 5 V
DS
DS
GS
Output Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
Transconductance
20
Capacitance
16
4
C
30
C
oss
iss
4 V
24
6
40
T
C
= - 55 °C
32
3 V
8
125 °C
50
25 °C
New Product
10
60
40
0.010
0.008
0.006
0.004
0.002
0.000
120
100
10
80
60
40
20
8
6
4
2
0
0
0.0
0
0
V
I
0.5
D
DS
= 50 A
20
On-Resistance vs. Drain Current
= 20 V
20
V
1.0
GS
Q
Transfer Characteristics
V
GS
g
- Gate-to-Source Voltage (V)
I
D
40
- Total Gate Charge (nC)
1.5
= 4.5 V
- Drain Current (A)
Gate Charge
40
SUD50N04-05L
2.0
25 °C
T
60
C
Vishay Siliconix
= 125 °C
2.5
60
80
3.0
V
www.vishay.com
GS
3.5
80
= 10 V
100
- 55 °C
4.0
120
100
4.5
3