BLF6G22LS-180PN:11 NXP Semiconductors, BLF6G22LS-180PN:11 Datasheet - Page 6

• Manufacturer Part Number: BLF6G22LS-180PN:11
• Description: BLF6G22LS-180PN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-180PN:11

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Fig 6.
(dB)
G
p
21
20
19
18
17
16
15
14
0
V
MHz; carrier spacing 10 MHz.
efficiency as functions of average load power;
typical values
2-carrier W-CDMA power gain and drain
DS
= 32 V; I
10
20
Dq
= 1600 mA; f
30
40
G
1
η
D
p
= 2157.5 MHz; f
50
All information provided in this document is subject to legal disclaimers.
001aah637
P
60
L(AV)
(W)
70
Rev. 04 — 4 March 2010
2
35
30
25
20
15
10
5
0
= 2167.5
(%)
η
D
Fig 7.
ACPR,
IMD3
(dBc)
−20
−30
−40
−50
−60
0
V
MHz; carrier spacing 10 MHz.
2-carrier W-CDMA adjacent channel power
ratio and third order intermodulation distortion
as functions of average load power; typical
values
DS
BLF6G22(LS)-180PN
= 32 V; I
10
20
Dq
= 1600 mA; f
30
Power LDMOS transistor
40
1
= 2157.5 MHz; f
50
ACPR
IMD3
© NXP B.V. 2010. All rights reserved.
001aah638
P
60
L(AV)
(W)
70
2
= 2167.5
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