BLF6G22LS-180PN:11 NXP Semiconductors, BLF6G22LS-180PN:11 Datasheet - Page 9

• Manufacturer Part Number: BLF6G22LS-180PN:11
• Description: BLF6G22LS-180PN/LDMOST/REEL13/
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22LS-180PN:11

• Transistor Type: LDMOS
• Frequency: 2.11GHz ~ 2.17GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 1.6A
• Voltage - Test: 32V
• Power - Output: 50W
• Package / Case: SOT502B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
9. Package outline
Fig 10. Package outline SOT539A
BLF6G22-180PN_22LS-180PN_3
Product data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
inches
UNIT
mm
VERSION
OUTLINE
SOT539A
H
0.185
0.165
4.7
4.2
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.007
0.004
0.18
0.10
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
13.72
0.540
e
All information provided in this document is subject to legal disclaimers.
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
0.375
0.365
9.53
9.27
E 1
Rev. 04 — 4 March 2010
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.137
0.117
3.48
2.97
w 2
w 3
5
L
M
M
BLF6G22(LS)-180PN
C
0.130
0.120
3.30
3.05
C
p
F
p
M
B
0.089
0.079
2.26
2.01
Q
w 1
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
Power LDMOS transistor
M
10.29
10.03
0.405
0.395
E 1
U 2
c
© NXP B.V. 2010. All rights reserved.
0.010 0.020
0.25
Q
w 1
ISSUE DATE
00-03-03
10-02-02
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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