PTFB213004F V1 Infineon Technologies, PTFB213004F V1 Datasheet - Page 12

• Manufacturer Part Number: PTFB213004F V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB213004F V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37275-6
• Other names: FB213004FV1NP

Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit assembly diagram (not to scale)*
*Gerber Files for this circuit available on request
Data Sheet
RF IN
C104
R801
R803
S1
R805
RO4350, .020
R106
R107
C103
(cont.)
C803
C111
C112
C102
C101
C106
C105
C109
S3
C110
C801
C113
C114
PTFB213004_IN_01
V
R802
DD
(60)
C802
R804
S2
R105
R104
12 of 16
C213
C214
RO4350, .020
C204
C205
C206
C207
C211
C212
C209
C210
PTFB213004_OUT_02
C201
(60)
C208
C202
C203
µF
10 µF
b 2 1 3 0 0 4 f _ C D _ 0 8 - 0 6 - 2 0 1 0
10
PTFB213004F
Rev. 05.2, 2010-12-09
RF OUT
V
V
DD
DD