PTFB213004F V1 Infineon Technologies, PTFB213004F V1 Datasheet - Page 3

• Manufacturer Part Number: PTFB213004F V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB213004F V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37275-6
• Other names: FB213004FV1NP

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-30
-40
-50
-60
-25
-35
-45
-55
-65
PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW
36
V
35
DD
= 30 V, I
2170 MHz
2140 MHz
2110 MHz
V
Two-carrier WCDMA Drive-up
10 MHz carrier spacing, 3.84 MHz BW
DD
Two-carrier WCDMA Drive-up
3GPP WCDMA signal, PAR = 8 dB,
IMD Up
= 30 V, I
39
ACPR
40
Output Power, avg. (dBm)
Output Power, Avg. (dBm)
DQ
= 2.4 A, 3GPP WCDMA signal,
IMD Low
DQ
43
= 2.4 A, ƒ = 2170 MHz,
44
(data taken in a production test fixture)
IM3 Up
IM3 Low
Efficiency
47
48
51
52
45
35
25
15
5
3 of 16
19
18
17
16
15
60
50
40
30
20
10
2060
35
Efficiency
Two-tone Broadband Performance
Gain
V
10 MHz carrier spacing, 3.85 MHz BW
V
DD
Two-carrier WCDMA Drive-up
DD
3GPP WCDMA signal, PAR = 8 dB,
= 30 V, I
= 30 V, I
2100
39
Output Power (dBm)
Frequency (MHz)
Gain
DQ
DQ
Efficiency
= 2.4 A, ƒ = 2170 MHz,
= 2.4 A, P
2140
43
Return Loss
O UT
PTFB213004F
2180
Rev. 05.2, 2010-12-09
47
= 126 W
IMD 3
2220
51
40
30
20
10
0
0
-10
-20
-30
-40
-50