PTFB213004F V1 Infineon Technologies, PTFB213004F V1 Datasheet - Page 4

• Manufacturer Part Number: PTFB213004F V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB213004F V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37275-6
• Other names: FB213004FV1NP

Confidential, Limited Internal Distribution
Typical Performance
Data Sheet
-20
-30
-40
-50
-60
-70
21
20
19
18
17
16
15
38
36
Gain
+25°C
+85°C
–30°C
IMD 3
(P
Two-tone Drive-up (over temp)
ƒ
1
O UT
ƒ
40
= 2140.5 MHz, ƒ
1
43
= 2170 MHz, ƒ
Output Power, PEP (dBm)
max 3rd order IMD @ –30dBc)
V
V
Two-tone Drive-up
Output Power (dBm)
DD
DD
= 30 V, I
= 30 V, I
44
Efficiency
48
(cont.)
DQ
DQ
2
2
48
= 2139.5 MHz
= 2169 MHz
Efficiency
= 2.4 A,
= 2.4 A,
53
52
58
0
50
40
30
20
10
60
50
40
30
20
10
0
4 of 16
19.0
18.5
18.0
17.5
17.0
-15
-25
-35
-45
-55
-65
-75
39
39
Gain & Efficiency vs. Output Power
2170 MHz
2140 MHz
2110 MHz
V
Two-tone IMD vs. Output Power
DD
= 30 V, I
43
43
Output Power, Avg. (dBm)
V
tone spacing = 1 MHz
DD
Output Power (dBm)
= 30 V, I
DQ
Efficiency
Gain
= 2.4 A, ƒ = 2170 MHz
47
47
DQ
= 2.4 A,
PTFB213004F
Rev. 05.2, 2010-12-09
51
51
55
55
5
0
45
40
35
30
25
20
15
10