PTFB213004F V1 Infineon Technologies, PTFB213004F V1 Datasheet - Page 6

• Manufacturer Part Number: PTFB213004F V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB213004F V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37275-6
• Other names: FB213004FV1NP

Confidential, Limited Internal Distribution
Typical Performance
Broadband Circuit Impedance
Frequency
Data Sheet
MHz
2080
2090
2100
2110
2120
2130
2140
2150
2160
2170
2180
2190
2200
20
15
10
5
0
36
Output PAR Compression (PARC)
PARC @ .01% CCDF
V
DD
single-carrier 3GPP WCDMA signal,
Gain
input PAR = 7.5 dB, 3.84 MHz BW
= 30 V, I
40
1.55
1.54
1.52
1.51
1.50
1.48
1.47
1.46
1.45
1.43
1.42
1.41
1.40
R
Output Power, avg. (dBm)
Z Source W
DQ
44
2110 MHz
= 2.4 A, ƒ = 2110 MHz,
(cont.)
ACP
Efficiency
–4.57
–4.52
–4.48
–4.44
–4.40
–4.36
–4.32
–4.28
–4.24
–4.20
–4.17
–4.13
–4.09
48
jX
db213004f-v1_2sgr Jan. 29, 2010 2:30:00 PM
Graph #2
Nornalized to 50 Ohms
ptfb213004f-v1
52
0.71
0.71
0.70
0.70
0.70
0.70
0.70
0.70
0.69
0.69
0.69
0.69
0.69
R
,
56
Z Load W
0
60
40
20
-20
-40
-60
-80
6 of 16
–2.91
–2.89
–2.86
–2.84
–2.81
–2.79
–2.77
–2.74
–2.72
–2.70
–2.67
–2.65
–2.63
jX
40
35
30
25
20
15
10
5
0
2060
Efficiency
Single-carrier Broadband Performance
Gain
PARC
V
single-carrier 3GPP WCDMA signal
DD
Z Source
2100
= 30 V, I
Frequency (MHz)
G
G
DQ
2140
= 2.4 A, P
IRL
2080 MHz
2200 MHz
PTFB213004F
2180
ACP
Rev. 05.2, 2010-12-09
2200 MHz
O UT
Z Load
2080 MHz
= 89 W,
D
S
D
Z Load
Z Source
2220
Z
0
0
-10
-15
-20
-25
-30
-35
-40
-5
= 50 W