PTFB213004F V1 Infineon Technologies, PTFB213004F V1 Datasheet - Page 15

• Manufacturer Part Number: PTFB213004F V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB213004F V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37275-6
• Other names: FB213004FV1NP

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Package Outline Specifications
Data Sheet
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4X R0.508
2X 45° X 1.19
[
[45° X .047]
R.020 +.015
9.398
[.370]
[.084] SPH
2X 30°
2.134
-.005
+.381
-.127
1.626
[0.064]
]
Diagram Notes—unless otherwise specified:
V1
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G1, G2 = gate; D1, D2 = drain; S = source; V1, V2 = V
5. Lead thickness: 0.127 ± 0.051 [.005 ±.002].
6. Gold plating thickness: 1.1 ± 0.38 micron [45 ± 15 microinch].
D1
G1
31.242±0.280
[1.230±.011]
C L
Package H-37275-6/2
13.716
[.540]
32.258
[1.270]
C L
C L
15 of 16
31.750
[1.250]
4X 11.684
[.460]
C L
2X 2.032
[.080]
REF
D2
G2
h- 37275- 6- 2 _po _07- 2 1- 2010
C L
V2
2X 3.175
9.144
[.360]
S
[.125]
2X 1.143
[
[.045]
4.585 +0.250
.180 +.010
DD
3.226±0.508
[.127±.020]
-0.127
-.005
10.160
[.400]
.
]
PTFB213004F
Rev. 05.2, 2010-12-09
16.612±.500
[.654±.020]