PSMN013-80YS,115 NXP Semiconductors, PSMN013-80YS,115 Datasheet

MOSFET N-CH 80V 60A LFPAK

PSMN013-80YS,115

Manufacturer Part Number
PSMN013-80YS,115
Description
MOSFET N-CH 80V 60A LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN013-80YS,115

Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.9 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
37nC @ 10V
Input Capacitance (ciss) @ Vds
2420pF @ 40V
Power - Max
106W
Mounting Type
Surface Mount
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
19.8 mOhms
Drain-source Breakdown Voltage
80 V
Continuous Drain Current
60 A
Power Dissipation
106 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4911-2
934063934115
1. Product profile
Table 1.
Symbol Parameter
V
I
P
T
Avalanche ruggedness
E
Dynamic characteristics
Q
Q
Static characteristics
R
D
j
DS
tot
DS(AL)S
DSon
GD
G(tot)
drain-source voltage
drain current
total power dissipation
junction temperature
non-repetitive drain-source
avalanche energy
gate-drain charge
total gate charge
drain-source on-state
resistance
Quick reference
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Advanced TrenchMOS provides low
RDSon and low gate charge
High efficiency gains in switching
power converters
DC-to-DC converters
Lithium-ion battery protection
Load switching
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Rev. 01 — 25 June 2009
Conditions
T
T
T
V
R
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
GS
GS
GS
≥ 25 °C; T
Figure 15
Figure 15
= 25 °C; V
= 25 °C; see
= 10 V; T
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 50 Ω; unclamped
j
D
D
D
D
≤ 150 °C
j(init)
GS
= 25 A; V
= 25 A; V
= 15 A; T
= 15 A; T
Figure 2
= 10 V; see
= 25 °C; I
j
j
DS
DS
= 100 °C; see
= 25 °C; see
= 40 V; see
= 40 V; see
D
= 55 A; V
Figure 1
Figure 13
sup
Figure
Figure
Figure 12
Improved mechanical and thermal
characteristics
LFPAK provides maximum power
density in a Power SO8 package
Motor control
Server power supplies
≤ 80 V;
14;
14;
-55
Min
-
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
-
8
37
-
9.7
Max
80
60
106
175
70
-
-
19.8
12.9
Unit
V
A
W
°C
mJ
nC
nC
mΩ
mΩ

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PSMN013-80YS,115 Summary of contents

Page 1

... PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Rev. 01 — 25 June 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... °C; see Figure ≤ 10 µs; pulsed °C; see °C; see Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω; unclamped R GS Rev. 01 — 25 June 2009 PSMN013-80YS Graphic symbol mbb076 Version SOT669 Min Max - - Figure 3 - 233 - 106 -55 175 -55 175 - 260 - 60 - 233 ≤ ...

Page 3

... N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 003aad230 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 Rev. 01 — 25 June 2009 PSMN013-80YS 03aa16 50 100 150 200 T (°C) mb 003aad314 10μ s 100μ s 1ms 10ms 100ms (V) DS © ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN013-80YS_1 Product data sheet N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Conditions see Figure Rev. 01 — 25 June 2009 PSMN013-80YS Min Typ Max - 0.54 1.4 003aac657 δ (s) -2 ...

Page 5

... D j Figure MHz see Figure 14; see Figure see Figure 14; see Figure MHz °C; see Figure 1.6 Ω 4.7 Ω R G(ext) Rev. 01 — 25 June 2009 PSMN013-80YS Min Typ Max Unit 4 µ µ 100 100 mΩ 19.8 mΩ - 9.7 12.9 mΩ Ω - 0.68 ...

Page 6

... Fig 6. Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aad183 45 R DSon (mΩ ° (V) GS Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 25 June 2009 PSMN013-80YS Min Typ Max Unit - 0.84 1 003aad187 C iss C rss ...

Page 7

... Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aad280 2.5 a 2.0 1.5 1.0 0.5 0.0 120 180 -60 T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 01 — 25 June 2009 PSMN013-80YS 03aa35 min typ max (V) GS 003aad045 - 120 150 ...

Page 8

... N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 003aad182 5 Fig 14. Gate charge waveform definitions (A) D 003aad185 (pF 40V (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 01 — 25 June 2009 PSMN013-80YS GS(pl) V GS(th GS1 GS2 G(tot) 003aaa508 003aad186 C iss C oss C rss - (V) DS © ...

Page 9

... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN013-80YS_1 Product data sheet N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 100 150 ° 175 ° ° 0.3 0.6 0.9 Rev. 01 — 25 June 2009 PSMN013-80YS 003aad184 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...

Page 10

... D 1 (1) ( max 4.41 2.2 0.9 0.25 0.30 4.10 5.0 4.20 3.62 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 01 — 25 June 2009 PSMN013-80YS detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 0.8 EUROPEAN ISSUE DATE ...

Page 11

... Table 7. Revision history Document ID Release date PSMN013-80YS_1 20090625 PSMN013-80YS_1 Product data sheet N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Rev. 01 — 25 June 2009 PSMN013-80YS Supersedes - © NXP B.V. 2009. All rights reserved ...

Page 12

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 25 June 2009 PSMN013-80YS © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 June 2009 Document identifier: PSMN013-80YS_1 ...

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