PSMN013-100ES NXP Semiconductors, PSMN013-100ES Datasheet
PSMN013-100ES
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PSMN013-100ES Summary of contents
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... PSMN013-100ES N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Rev. 3 — 29 September 2011 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... drain-source avalanche energy unclamped; R Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES Min = Figure 13 °C; - j(init) ≤ 100 V; sup = 50 Ω GS ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure ° -55 -55 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN013-100ES Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Conditions see vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES Min Typ Figure ...
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... MHz °C; see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES Min Typ Max Unit 100 - - ...
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... V (V) DS Fig 5. 003a a d585 (V) GS Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES Min Typ = 25 ° 109 Input and reverse transfer capacitances as a function of gate-source voltage; typical values ...
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... V (V) GS Fig 9. 03aa35 typ max (V) GS Fig 11. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − Gate-source threshold voltage as a function of junction temperature 3 ...
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... N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. 003aad578 (A) D Fig 13. Gate-source voltage as a function of gate (pF 003aaa508 Fig 15. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES ( 50V charge ...
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... Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES 003a a d584 25 °C 0.9 1 © NXP B.V. 2011. All rights reserved ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...
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... N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES Supersedes PSMN013-100ES v.2 PSMN013-100ES v.1 © NXP B.V. 2011. All rights reserved ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100ES Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 September 2011 Document identifier: PSMN013-100ES ...