PSMN013-30MLC,115 NXP Semiconductors, PSMN013-30MLC,115 Datasheet

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PSMN013-30MLC,115

Manufacturer Part Number
PSMN013-30MLC,115
Description
MOSFET N-channel MOSFET logic level LFPAK33
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN013-30MLC,115

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
27 V
Gate-source Breakdown Voltage
1.95 V
Continuous Drain Current
39 A
Resistance Drain-source Rds (on)
16.9 mOhms
Mounting Style
SMD/SMT
Package / Case
LFPAK33
Power Dissipation
38 W
Factory Pack Quantity
1500
1. Product profile
Table 1.
Symbol
V
I
P
T
Static characteristics
R
Dynamic characteristics
Q
Q
D
j
DS
tot
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
total gate charge
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN013-30MLC
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33
using NextPower Technology
Rev. 4 — 15 June 2012
Low parasitic inductance and
resistance
Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
DC-to-DC converters
Load switching
Conditions
T
T
T
V
see
V
see
V
see
V
see
j
mb
mb
GS
GS
GS
GS
= 25 °C
Figure 10
Figure 10
Figure
Figure
= 25 °C; V
= 25 °C; see
= 4.5 V; I
= 10 V; I
= 4.5 V; I
= 4.5 V; I
12; see
12; see
D
D
D
D
GS
= 10 A; T
= 10 A; T
= 10 A; V
= 10 A; V
Figure 2
= 10 V; see
Figure 13
Figure 13
j
j
DS
DS
= 25 °C;
= 25 °C;
= 15 V;
= 15 V;
Figure 1
Ultra low QG, QGD, & QOSS for high
system efficiencies at low and high
loads
Synchronous buck regulator
Min
-
-
-
-55
-
-
-
-
Product data sheet
Typ
-
-
-
-
14.65
11.8
1
3.7
Max
30
39
38
175
16.9
13.6
-
-
Unit
V
A
W
°C
mΩ
mΩ
nC
nC

Related parts for PSMN013-30MLC,115

PSMN013-30MLC,115 Summary of contents

Page 1

... PSMN013-30MLC N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 — 15 June 2012 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...

Page 2

... ° j(init) ≤ Ω; unclamped; V sup GS see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC Graphic symbol mbb076 Version SOT1210 Min Max - 30 -20 20 Figure Figure 1 ...

Page 3

... All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC 100 150 Normalized total power dissipation as a function of mounting base temperature 003aaj397 (1) ( (ms) © NXP B.V. 2012. All rights reserved. ...

Page 4

... PSMN013-30MLC Product data sheet Limit DSon Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC 003aaj398 =10 μ 100 μ 100 (V) DS Min Typ Max - 3.8 3.99 003aaj399 ...

Page 5

... Figure 12; see Figure see Figure D DS see Figure MHz °C; see Figure 14 j All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC Min Typ Max 1.3 1.66 1. 100 ...

Page 6

... Figure 16 DS 003aaj400 50 R DSon (mΩ 2 (V) = 2 (V) DS Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC Min Typ Max - 0. 8.6 ...

Page 7

... V ( -60 I (A) D Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC 003aaj403 = 150 ° ° 003aaj407 10V ...

Page 8

... Fig 13. Gate-source voltage as a function of gate 003aaj409 C iss C oss C rss (V) DS Fig 15. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC ( ...

Page 9

... N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Fig 16. Reverse recovery timing definition PSMN013-30MLC Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC 003a a f 444 0. © NXP B.V. 2012. All rights reserved ...

Page 10

... detail X 0 2.5 scale (1) ( 2.35 3.40 2.45 0.65 1.90 3.20 2.00 References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC θ θ ° 3.40 0.25 0.50 8 0.65 0.20 0.10 ° 3.20 0.13 0.30 0 European ...

Page 11

... Various changes to content. PSMN013-30MLC v.3 20120607 PSMN013-30MLC Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC Supersedes PSMN013-30MLC v.3 PSMN013-30MLC v.2 © NXP B.V. 2012. All rights reserved ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 4 — 15 June 2012 PSMN013-30MLC © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN013-30MLC All rights reserved. Date of release: 15 June 2012 ...

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