PSMN013-100PS NXP Semiconductors, PSMN013-100PS Datasheet

Standard level N-channel MOSFET in TO220 package qualified to 175C

PSMN013-100PS

Manufacturer Part Number
PSMN013-100PS
Description
Standard level N-channel MOSFET in TO220 package qualified to 175C
Manufacturer
NXP Semiconductors
Datasheet

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PSMN013-100PS
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol
V
P
T
Dynamic characteristics
Q
I
Static characteristics
R
D
j
DS
tot
DSon
GD
PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Rev. 3 — 29 September 2011
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
gate-drain charge
Conditions
T
T
see
T
V
T
V
T
V
V
see
j
mb
mb
j
j
GS
GS
GS
DS
≥ 25 °C; T
= 100 °C; see
= 25 °C; see
= 25 °C; V
Figure 1
= 25 °C; see
Figure 14
= 50 V; see
= 10 V; I
= 10 V; I
= 10 V; I
j
D
D
D
≤ 175 °C
GS
= 15 A;
= 15 A;
= 25 A;
Figure 13
Figure
Figure 12
Suitable for standard level gate drive
Motor control
Server power supplies
Figure 2
= 10 V;
15;
[1]
[2]
Min
-
-
-
-55
-
-
-
Product data sheet
Typ
-
-
-
-
19.4 25
10.8 13.9 mΩ
17
Max Unit
100
57
170
175
-
V
A
W
°C
mΩ
nC

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PSMN013-100PS Summary of contents

Page 1

... PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 3 — 29 September 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... energy unclamped; R Simplified outline SOT78 (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS Min Typ = Figure 14 ° j(init) ≤ ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 - [1] ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN013-100PS Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in TO220 All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS 003aae168 =10 μ 100 μ 100 ms ...

Page 5

... PSMN013-100PS Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in TO220. Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS Min Typ Max - 0.5 0 003a a d575 t p δ ...

Page 6

... MHz °C; see Figure Ω 4.7 Ω °C G(ext) j All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS Min Typ Max = -55 ° °C 100 - - 4.6 ...

Page 7

... V (V) DS Fig 6. 003a a d585 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS Min Typ = 25 ° 109 Input and reverse transfer capacitances as a function of gate-source voltage; typical values ...

Page 8

... V (V) GS Fig 10. Gate-source threshold voltage as a function of 03aa35 typ max (V) GS Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 3 ...

Page 9

... N-channel 100V 13.9mΩ standard level MOSFET in TO220. 003aad578 (A) D Fig 14. Gate-source voltage as a function of gate (pF 003aaa508 Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS ( 50V charge ...

Page 10

... Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in TO220. 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS 003a a d584 25 °C 0.9 1 © NXP B.V. 2011. All rights reserved ...

Page 11

... 1.3 0.7 16.0 6.6 10.3 2.54 0.4 15.2 5.9 9.7 1.0 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...

Page 12

... N-channel 100V 13.9mΩ standard level MOSFET in TO220. Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS Supersedes PSMN013-100PS v.2 PSMN013-100PS v.1 © NXP B.V. 2011. All rights reserved ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS © NXP B.V. 2011. All rights reserved ...

Page 14

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 29 September 2011 PSMN013-100PS Trademarks © NXP B.V. 2011. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 September 2011 Document identifier: PSMN013-100PS ...

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