PSMN013-80YS NXP Semiconductors, PSMN013-80YS Datasheet
PSMN013-80YS
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PSMN013-80YS Summary of contents
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... PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Rev. 01 — 25 June 2009 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω; unclamped R GS Rev. 01 — 25 June 2009 PSMN013-80YS Graphic symbol mbb076 Version SOT669 Min Max - - Figure 3 ...
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... N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 003aad230 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature DC 10 Rev. 01 — 25 June 2009 PSMN013-80YS 03aa16 50 100 150 200 T (°C) mb 003aad314 10μ s 100μ s 1ms 10ms 100ms (V) DS © ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN013-80YS_1 Product data sheet N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Conditions see Figure Rev. 01 — 25 June 2009 PSMN013-80YS Min Typ Max - 0.54 1.4 003aac657 δ ...
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... Figure 14; see Figure MHz °C; see Figure 1.6 Ω 4.7 Ω R G(ext) Rev. 01 — 25 June 2009 PSMN013-80YS Min Typ Max Unit 4 µA ...
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... Input and reverse transfer capacitances as a function of gate-source voltage; typical values 003aad183 45 R DSon (mΩ ° (V) GS Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 25 June 2009 PSMN013-80YS Min Typ Max Unit - 0.84 1 003aad187 C iss C rss 3 6 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aad280 2.5 a 2.0 1.5 1.0 0.5 0.0 120 180 -60 T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 01 — 25 June 2009 PSMN013-80YS 03aa35 min typ max (V) GS 003aad045 - 120 150 180 T (° ...
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... D 003aad185 (pF 40V (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 01 — 25 June 2009 PSMN013-80YS GS(pl) V GS(th GS1 GS2 G(tot) 003aaa508 003aad186 C iss ...
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... Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN013-80YS_1 Product data sheet N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET 100 150 ° 175 ° ° 0.3 0.6 0.9 Rev. 01 — 25 June 2009 PSMN013-80YS 003aad184 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 2.5 scale ( (1) ( max 4.41 2.2 0.9 0.25 0.30 4.10 5.0 4.20 3.62 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 01 — 25 June 2009 PSMN013-80YS detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 0.8 EUROPEAN ISSUE DATE PROJECTION 04-10-13 06-03-16 © NXP B.V. 2009. All rights reserved. ...
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... Revision history Table 7. Revision history Document ID Release date PSMN013-80YS_1 20090625 PSMN013-80YS_1 Product data sheet N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - Rev. 01 — 25 June 2009 PSMN013-80YS Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 25 June 2009 PSMN013-80YS © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 25 June 2009 Document identifier: PSMN013-80YS_1 ...