PSMN013-100PS,127 NXP Semiconductors, PSMN013-100PS,127 Datasheet

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PSMN013-100PS,127

Manufacturer Part Number
PSMN013-100PS,127
Description
MOSFET N-CH 100V 68A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN013-100PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.9 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
68A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
3195pF @ 50V
Power - Max
170W
Mounting Type
Through Hole
Gate Charge Qg
59 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
25 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
68 A
Power Dissipation
170 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4976-5
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol Parameter
V
I
P
T
Avalanche ruggedness
E
Dynamic characteristics
Q
Q
D
j
DS
tot
DS(AL)S
GD
G(tot)
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
PSMN013-100PS
N-channel 100V 13.9mΩ standard level MOSFET in TO220.
Rev. 02 — 22 January 2010
drain-source voltage T
drain current
total power
dissipation
junction temperature
non-repetitive
drain-source
avalanche energy
gate-drain charge
total gate charge
Quick reference
Conditions
T
see
T
V
I
unclamped; R
V
V
and
V
V
and
D
j
mb
mb
GS
GS
DS
GS
DS
≥ 25 °C; T
= 68 A; V
Figure 1
= 25 °C; V
= 25 °C; see
14
15
= 50 V; see
= 50 V; see
= 10 V; T
= 10 V; I
= 10 V; I
sup
j
D
D
≤ 175 °C
j(init)
GS
GS
= 25 A;
= 25 A;
≤ 100 V;
Figure 15
Figure 14
= 50 Ω
Figure 2
= 10 V;
= 25 °C;
Suitable for standard level gate drive
Motor control
Server power supplies
Min
-
-
-
-55
-
-
-
Product data sheet
Typ
-
-
-
-
-
17
59
Max
100
68
170
175
127
-
-
Unit
V
A
W
°C
mJ
nC
nC

Related parts for PSMN013-100PS,127

PSMN013-100PS,127 Summary of contents

Page 1

... PSMN013-100PS N-channel 100V 13.9mΩ standard level MOSFET in TO220. Rev. 02 — 22 January 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... Ordering information Table 3. Ordering information Type number Package Name Description PSMN013-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN013-100PS_2 Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in TO220. Quick reference …continued Conditions ...

Page 3

... R GS 003aac512 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS Min Max - 100 - 100 - Figure 3 - 272 - 170 -55 175 -55 175 ...

Page 4

... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN013-100PS_2 Product data sheet N-channel 100V 13.9mΩ standard level MOSFET in TO220 Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS 003aae168 =10 μ 100 μ 100 ( Min Typ Max - ...

Page 5

... V; see Figure 14 and see Figure see Figure 15 and see Figure 15 and MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS Min Typ Max Unit 100 - - 4 100 µA - 0.06 2 µ 100 100 nA - ...

Page 6

... C 6 (pF) 4000 5.5 3000 5 2000 4 1000 (V) DS Fig 6. Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS Min Typ Max - 20 52 0.85 1 109 - 003a a d580 ...

Page 7

... V GS(th) ( ° − (V) GS Fig 10. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS 003a a d586 120 I (A) D 003aad280 max typ min 0 60 120 T (°C) j © NXP B.V. 2010. All rights reserved. ...

Page 8

... (A) D Fig 14. Gate-source voltage as a function of gate charge; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS 003aad774 0 60 120 180 T (°C) j 003a a d583 V = 50V (nC) G © NXP B.V. 2010. All rights reserved ...

Page 9

... 175 ° ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS 003aad581 C iss C oss C rss −2 − (V) DS 003a a d584 1 © NXP B.V. 2010. All rights reserved. ...

Page 10

... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3 ...

Page 11

... N-channel 100V 13.9mΩ standard level MOSFET in TO220. Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS Supersedes PSMN013-100PS_1 - © NXP B.V. 2010. All rights reserved ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS © NXP B.V. 2010. All rights reserved ...

Page 13

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 22 January 2010 PSMN013-100PS © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 22 January 2010 Document identifier: PSMN013-100PS_2 ...

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