IRLMS1902TRPBF International Rectifier, IRLMS1902TRPBF Datasheet

MOSFET N-CH 20V 3.2A 6-TSOP

IRLMS1902TRPBF

Manufacturer Part Number
IRLMS1902TRPBF
Description
MOSFET N-CH 20V 3.2A 6-TSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLMS1902TRPBF.pdf (8 pages)

Specifications of IRLMS1902TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
300pF @ 15V
Power - Max
1.7W
Mounting Type
Surface Mount
Package / Case
Micro6™(TSOP-6)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
100 mOhms
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
3.2 A
Power Dissipation
1.7 W
Mounting Style
SMD/SMT
Gate Charge Qg
4.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLMS1902PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRLMS1902TRPBF
Manufacturer:
MAXIM
Quantity:
48
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRLMS1902TRPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
Fifth Generation HEXFET
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe
produces a HEXFET
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
www.irf.com
θ
®
power MOSFETs are well known for,
R
®
power MOSFET with R
®
power MOSFETs from
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‚
„
DS(on)
DS(on)
G
D
D
1
2
3
Top View
IRLMS1902PbF
HEXFET
6
4
5
D
S
D
A
Micro6™
®
R
Power MOSFET
DS(on)
V
DSS
= 20V
= 0.10Ω
mW/°C
1

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IRLMS1902TRPBF Summary of contents

Page 1

... Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ® HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

J SM   ‚ ≤ ≤ ≤ ≤ Ω ƒ ≤ „ ƒ ƒ ƒ Ω ƒ Ω ‚ ‚ ≤ ≤ www.irf.com ...

Page 3

VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM 1.75V 10 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS 100 ° ...

Page 4

1MHz iss rss gd 500 oss ds gd 400 C iss 300 200 C oss ...

Page 5

Charge Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. 3mA Current Sampling Resistors 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 ...

Page 6

Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 12. For N-channel HEXFET 6 + • • ƒ • - „ • • ...

Page 7

Micro6 (SOT23 6L) Package Outline Dimensions are shown in milimeters (inches) 3.00 (.118 ) -B- 2.80 (.111 ) 1.75 (.068 ) 3.00 (.118 ) 1.50 (.060 ) 2.60 (.103 ) - 0.95 ( .0375 ...

Page 8

Micro6 Tape & Reel Information Dimensions are shown in milimeters (inches) 4mm NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. This ...

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