IRLMS1902TRPBF International Rectifier, IRLMS1902TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLMS1902TRPBF
• Description: MOSFET N-CH 20V 3.2A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLMS1902TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLMS1902PBFTR

6
Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 12. For N-channel HEXFET
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
ƒ
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
®
-
power MOSFETs
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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