IRLMS1902TRPBF International Rectifier, IRLMS1902TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRLMS1902TRPBF
• Description: MOSFET N-CH 20V 3.2A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLMS1902TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLMS1902PBFTR

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100
100
0.1
0.1
10
10
1
1
1.5
0.1
TOP
BOTTOM
2.0
V
V
DS
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
2.5
T = 25 C
J
3.0
°
1
3.5
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
DS
J
= 10V
4.0
T = 150 C
J
°
4.5
°
5.0
10
100
0.1
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
2.2A
V
DS
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
T , Junction Temperature( C)
J
, Drain-to-Source Voltage (V)
0
20 40 60 80 100 120 140 160
1
20µs PULSE WIDTH
T = 150 C
J
°
V
°
GS
=
4.5V
10
3