IRLMS1902TRPBF International Rectifier, IRLMS1902TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRLMS1902TRPBF
• Description: MOSFET N-CH 20V 3.2A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLMS1902TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLMS1902PBFTR

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100
0.1
10
0.00001
1
12V
D = 0.50
V
V
GS
G
0.20
0.10
0.05
0.02
0.01
Same Type as D.U.T.
Current Regulator
.2µF
Q
GS
(THERMAL RESPONSE)
0.0001
50KΩ
3mA
Current Sampling Resistors
SINGLE PULSE
.3µF
I
Q
Charge
Q
G
GD
G
D.U.T.
I
D
0.001
+
-
V
DS
t , Rectangular Pulse Duration (sec)
1
0.01
0.1
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
≤ 0.1 %
≤ 1
t
r
1
J
DM
x Z
1
thJA
P
2
DM
t
+ T
d(off)
10
A
t
1
t
f
t
2
+
-
100
5